FDS5670, МОП-транзистор, N Канал, 10 А, 60 В, 14 мОм, 10 В, 2.4 В

FDS5670, МОП-транзистор, N Канал, 10 А, 60 В, 14 мОм, 10 В, 2.4 ВThe FDS5670 is a N-channel MOSFET produced using Fairchild Semiconductor’s PowerTrench® process. It designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It feature faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher overall efficiency.

• Low gate charge
• Fast switching speed
• High performance Trench technology for extremely low RDS (ON)
• High power and current handling capability

Полупроводники — ДискретныеТранзисторыМОП-транзисторы